EE - Fabricating ferroelectric capacitor crossbar for storage and computing
In this project, we will build ferroelectric capacitor crossbar array for the high density storage and computing applications. Ferroelectric memory is a highly promising technology due to its energy efficiency, scalability, and cost effectiveness. Recently, major semiconductor company have demonstrated fascinating 32Gb array that can support a wide range of applications. To further improve the memory density, the capacitor crossbar array is promising.
In this task, the student is expected to learn all the fabrication skills to integrate ferroelectric capacitors in the cleanroom. It involves layout drawing, lithography, deposition, etching, etc. After device fabrication, the student will also learn the device characterization. After the project, the student will be very familiar with the semiconductor fabrication and research.
The Nanoelectronic Devices and Systems lab directed by Prof. Kai Ni is working on the foundational technology that can enable the next generation computing and storage. Our group works on the state-of-the-art semiconductor devices that can potentially transform the modern memory hierarchy and support energy efficient computing. By working on the project, the student has a chance to developing necessary skills to work in semiconductor industry. In addition, the lab is well connected with industry, such as Samsung, Intel, Micron, etc. The students will have a chance to interact with industry for career development.