EE - Semiconductor Device Research
Specific projects in mind for school year 2026/2027 are:
(1) electrical characterization of InSb quantum well devices. We will take fabricated InSb quantum well devices and perform electrical characterization to measure properties such as contact resistance, mobility, drive current, off state current and gate leakage. Students will learn how to operate probe station to gather volume data and analyze it for trends as well as use collected data to extract different parameters. Potentially we will look at low temperature performance as well as high-frequency performance as well.
(2) layer transfer of InP based HEMTs epitaxial structures. We will start by performing literature survey to learn state of the art layer transfer approaches for Si, and III-V (including InP and GaN) layer structures. Then we will define and execute process experiments (in NDNF or otherwise) to attempt moving InP high mobility transistor epitaxial structures onto Si or other substrates. Secondly, we will verify both electrically and at material level the quality of layer transfer, to understand as well improve the process.
Semiconductor Systems Lab has just begun its existence in January of 2026 with Professor Radosavljevic joining Notre Dame Electrical Engineering faculty after 22 year career at Intel. We hope to create a space to pursue high-risk high-reward academic research which is applicable to key problems in industry, while forming a team that both works and plays hard.